Method for manufacturing high-brightness vertical light emitting diode



The invention relates to a method for manufacturing a high-brightness vertical light emitting diode. The method comprises the following steps of: forming a plurality of epitaxial material layers on a first patterned substrate, wherein a contact surface of the epitaxial material layers, which is contacted with the first patterned substrate, is a first surface, and a pattern corresponding to the first patterned substrate is formed on the first surface; arranging a second substrate on the epitaxial material layers; removing the first substrate to expose the first surface; planarizing the first surface to remove the pattern on the first surface corresponding to the first substrate so as to form a planar second surface; and forming a first electrode on the back side of the second substrate and forming a second electrode on the second surface, wherein the light emitting brightness of the component can be improved through proper surface roughening treatment.




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Cited By (2)

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    CN-105374906-AMarch 02, 2016广东量晶光电科技有限公司LED chip and preparation method thereof
    WO-2015154551-A1October 15, 2015厦门市三安光电科技有限公司Diode électroluminescente à haute brillance ayant une microstructure de surface, et préparation et son procédé de criblage