非易失性存储设备及其读取方法

Nonvolatile memory device and read method thereof

Abstract

A method of reading a nonvolatile memory device comprises sensing data stored in memory cells adjacent to selected memory cells to identify adjacent aggressor cells, and performing separate precharge operations on bitlines connected to selected memory cells having adjacent aggressor cells and on bitlines connected to selected memory cells having adjacent non-aggressor cells.
一种读取非易失性存储设备的方法,包括:读出存储在与已选择存储单元邻近的存储单元中的数据以识别邻近的侵扰者单元;以及对连接到具有邻近的侵扰者单元的选择存储单元的位线、和对连接到具有邻近的非侵扰者单元的选择存储单元的位线执行分开的预充电操作。

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Patent Citations (2)

    Publication numberPublication dateAssigneeTitle
    US-6480419-B2November 12, 2002Samsung Electronics Co., Ltd.Bit line setup and discharge circuit for programming non-volatile memory
    WO-9715929-A1May 01, 1997Nvx CorporationMemoire remanente a semiconducteur ayant une structure cellulaire et inverse

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Cited By (2)

    Publication numberPublication dateAssigneeTitle
    CN-102479547-AMay 30, 2012三星电子株式会社非易失性存储器件、其操作方法以及具有其的电子设备
    CN-104240745-ADecember 24, 2014爱思开海力士有限公司半导体存储装置和包括其的存储系统